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| 20N50 Datasheet, PDF (3/4 Pages) Nell Semiconductor Co., Ltd – N-Channel Power MOSFET | |||
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20N50
Preliminary
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Gate-Source Breakdown Voltage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
V(BR)GSS
ID=10mA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
IG=±10µA, VDS=0V
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=10A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
VGS=10V, VDDâ400V, ID=20A
MIN TYP MAX UNIT
500
V
100 µA
+10 µA
-10 µA
±30
V
2.0
4.0 V
0.21 0.27 â¦
3400
pF
320
pF
25
pF
70
nC
45
nC
25
nC
130
ns
70
ns
280
ns
Fall-Time
tF
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
(Note)
IS
Maximum Body-Diode Pulsed Current
(Note)
ISM
Drain-Source Diode Forward Voltage
VSD
IS=20A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IS=20A, VGS=0V, dIDR/dt=100A/µs
Note: Ensure that the channel temperature does not exceed 150°C.
20 A
80 A
1.7 V
1300
ns
20
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-895.a
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