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| 20N15 Datasheet, PDF (3/4 Pages) Unisonic Technologies – 20A, 150V N-CHANNEL POWER MOSFET | |||
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20N15
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
BVDSS ID=0.25mA, VGS=0V
Drain-Source Leakage Current
VDS=150V, VGS=0V
IDSS
VDS=150V, VGS=0V, TJ=125°C
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS (Note 1)
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=0.25mA
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=10A
DrainâSource OnâVoltage
VDS(ON) VGS=10V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2)
QG
Gate Charge
QGS
VGS=10V, VDS=75V, ID=20A
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=75V, VGS=10V, ID=20A,
RG=9.1â¦
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=20A, VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Pulsed Drain-Source Current
ISM
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
QRR
IS=20A, VGS=0V, dIS/dt=100A/µs
Notes: 1. Pulse Test: Pulse Widthâ¤300µs, Duty Cycleâ¤2%.
2. Switching characteristics are independent of operating junction temperature.
MIN TYP MAX UNIT
150
V
10 µA
100 µA
100 nA
100 nA
2.0
4.0 V
0.12 0.13 â¦
2.8 V
1133 1627 pF
332 474 pF
105 174 pF
39.1 55.9 nC
7.5
nC
22
nC
11 25 ns
77 153 ns
33 67 ns
49 97 ns
1.5 V
20 A
60 A
160
ns
1.1
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-904.C
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