1N50Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 1.3A, 500V N-CHANNEL POWER MOSFET

1N50Z
Preliminary
„ ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q_G
Q_GS
V_GS=10V, V_DS=400V, I_D=1.5A
(Note 1, 2)
Q_GD
Turn-ON Delay Time
t_D(ON)
Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=250V, I_D=1.5A, R_G=25Ω
(Note 1, 2)
Fall-Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
Maximum Body-Diode Pulsed Current
I_SM
Drain-Source Diode Forward Voltage
V_SD
I_S=1.3A, V_GS=0V
Body Diode Reverse Recovery Time
t_rr
I_S=1.5A, V_GS=0V,
Body Diode Reverse Recovery Charge
Q_RR
dI_F/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
11 16 nC
1.6
nC
5.5
nC
12 35 ns
13 35 ns
42 90 ns
15 40 ns
1.3 A
5A
1.15 V
162
ns
0.54
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-726.b