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| 12N50_15 Datasheet, PDF (3/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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12N50
Power MOSFET
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=12A
(Note 1, 2)
VDD=250V, ID=12A, RG=25â¦
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IS=12A, VGS=0V, dIF/dt=100A/µs
QRR
(Note 1)
Note: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.42 0.54 â¦
1450 1930 pF
198 265 pF
14.5 22 pF
30 39 nC
8
nC
12
nC
28 65 ns
54 120 ns
75 160 ns
47 105 ns
12 A
48 A
1.5 V
154
ns
0.45
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-528.F
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