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| 10N80_12 Datasheet, PDF (3/6 Pages) Unisonic Technologies – 10A, 800V N-CHANNEL POWER MOSFET | |||
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10N80
Power MOSFET
 ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0 V, ID =250 µA
Drain-Source Leakage Current
IDSS
VDS =800V, VGS =0 V
VDS =640V, TC =125°C
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±30 V
Breakdown Voltage Temperature Coefficient ÎBVDSS/ÎTJ ID=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =250µA
Static Drain-Source On-Resistance
RDS(ON) VGS = 10V, ID = 5.0A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS =25V, VGS =0V,
f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=400V, ID=10.0A,
RG=25⦠(Note 1,2)
Turn-OFF Fall-Time
tF
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
VDS =640V, VGS =10V,
ID =10.0A (Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=10.0 A,VGS=0V
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
VGS = 0V, dIF /dt = 100 A/µs,
Reverse Recovery Charge
QRR IS = 10.0A (Note 1)
Notes: 1. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
2. Independent of operating temperature.
MIN TYP MAX UNIT
800
V
10
µA
100
±100 nA
980
V/°С
3.0
5.0 V
0.9 1.1 â¦
2150 2800 pF
180 230 pF
15 20 pF
50 110
130 270
ns
90 190
80 170
45 58
13.5
nC
17
1.4 V
10.0
A
40.0
730
ns
10.9
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-218.F
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