10N70Z Datasheet, PDF (3/6 Pages) Unisonic Technologies – 10A, 700V N-CHANNEL POWER MOSFET

10N70Z
Power MOSFET
 ELECTRICAL CHARACTERISTICS( T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = 250μA
700
Drain-Source Leakage Current
I_DSS
V_DS = 700V, V_GS = 0V
Gate-Source Leakage Current
Forward
Reverse
I_GSS
V_GS = 20 V, V_DS = 0 V
V_GS = -20 V, V_DS = 0 V
Breakdown Voltage Temperature Coefficient ∆BV_DSS/∆T_J I_D = 250 µA, Referenced to 25°C
0.7
V
10 µA
5 µA
-5 µA
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
V_GS(TH)
R_DS(ON)
V_DS = V_GS, I_D = 250μA
V_GS = 10V, I_D = 5A
2.0
4.0 V
0.9 1.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_DS=25V, V_GS=0V, f=1.0 MHz
1570 2040 pF
166 215 pF
18 24 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_GD
V_DS=350V, I_D =10A, R_G =25Ω
(Note 1, 2)
V_DS=560V, I_D=10A, V_GS=10 V
(Note 1, 2)
23 55 ns
69 150 ns
144 300 ns
90 165 ns
44 57 nC
6.7
nC
18.5
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V_SD
V_GS = 0 V, I_S =10A
Maximum Continuous Drain-Source Diode
Forward Current
I_S
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
1.4 V
10 A
40 A
Reverse Recovery Time
t_rr
V_GS = 0 V, I_S = 10A,
Reverse Recovery Charge
Q_RR dIF / dt = 100 A/µs (Note 1)
Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
2. Essentially independent of operating temperature
420
ns
4.2
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-935,A