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X1049A_12 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH GAIN TRANSISTOR
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X1049A
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse
IC
4
A
20
A
Base Current
IB
500
mA
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
PD
TJ
TOPR
TSTG
1
W
125
℃
-20 ~ +85
℃
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
VCBO IC=100μA
80 120
V
Collector-Emitter Breakdown Voltage
VCEO IC=10mA
25
35
V
Collector-Emitter Breakdown Voltage
VCES IC=100μA
80 120
V
Collector-Emitter Breakdown Voltage
VCEV IC=100μA, VEB=1V
80 120
V
Emitter-Base Breakdown Voltage
VEBO IE=100μA
5 8.75
V
Collector Cut-Off Current
ICBO VCB=50V
0.3
10
nA
Emitter Cut-Off Current
IEBO VEB=4V
0.3
10
nA
Collector Emitter Cut-Off Current
ICES VCES=50V
0.3
10
nA
IC=0.5A, IB=10mA
30
70
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=1A, IB=10mA
IC=2A, IB=10mA
60 130
125 280
mV
IC=4A, IB=50mA
155 400
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
890 980 mV
Base-Emitter Turn-On Voltage (Note) VBE(ON) IC=4A, VCE=2V
820 920 mV
IC=10mA, VCE=2V
250 430
IC=0.5A, VCE=2V
300 450
DC Current Gain (Note)
hFE IC=1A, VCE=2V
300 450 1200
IC=4A, VCE=2V
200 350
IC=20A, VCE=2V
7
Transition Frequency
fT IC=50mA, VCE=10V, f=50MHz
180
MHz
Output Capacitance
COBO VCB=10V, f=1MHz
45
60
pF
Turn-On Time
tON IC=4A, IB=40mA, VCC=10V
125
ns
Turn-Off Time
tOFF IC=4A, IB=±40mA, VCC=10V
380
ns
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-061.C
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