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| UTT60N10_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL MOSFET TRANSISTOR | |||
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UTT60N10
Power MOSFE
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
Drain Current
Avalanche Energy
Continuous
Pulsed
Single Pulsed
VGSS
ID
IDM
EAS
±25
V
60
A
100
A
270
mJ
TO-220
100
W
Power Dissipation
TO-220F1
PD
W
TO-252
114
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
TO-220/ TO-220F1
TO-252
TO-220
Junction to Case
TO-220F1
TO-252
ï® ELECTRICAL CHARACTERISTICS
SYMBOL
θJA
θJC
RATINGS
62.5
100
1.25
1.77
2.5
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VGS=+25V, VDS=0V
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=0.5A, RG=50â¦,
VGS=10V
VGS=10V, VDS=25V, ID=1.3A,
IG=100µA
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=30A, VGS=0V
MIN TYP MAX UNIT
100
V
1 µA
+100 nA
-100 nA
1.0
3.0 V
15 24 mâ¦
1320 1900 pF
330 680 pF
132 200 pF
140
ns
180
ns
2180
ns
396
ns
213
nC
17
nC
33
nC
60
A
100
A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-664.E
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