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UTT50N05 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR
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UTT50N05
Preliminary
Power MOSFE
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed
IDM
50
A
200
A
Avalanche Energy
Single Pulsed
EAS
Repetitive
EAR
400
mJ
100
mJ
Power Dissipation
PD
113
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
„ ELECTRICAL CHARACTERISTICS
RATINGS
100
1.1
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
Gate- Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IDSS
VDS=100V, VGS=0V
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=20A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=30V, ID=50A,
IG=3.33mA
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
tD(ON)
tR
tD(OFF)
tF
VDD=30V, ID=15A, RG=2.5Ω,
VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=50A, VGS=0V
MIN TYP MAX UNIT
50
V
10 µA
+100 nA
-100 nA
2
4V
18 23 mΩ
900 1220 pF
430 550 pF
80 100 pF
30 40 nC
9.6
nC
10
nC
40 60 ns
100 200 ns
90 180 ns
80 160 ns
50
A
200
A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-663.a
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