UTT30N08 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 80V, 30A N-CHANNEL POWER MOSFET

UTT30N08
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified) (Note 4)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V_DSS
80
V
Gate-Source Voltage
V_GSS
±20
V
Continuous
Drain Current (Note 5)
T_C=25°C
T_C=100°C
I_D
30
A
21.3
A
Pulsed (Note 2)
I_DM
120
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
300
mJ
8
mJ
Power Dissipation (T_C=25°C)
P_D
28
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=4mH, I_AS=30A. V_DD=50V, R_G=25Ω, Starting T_J=25°C
4. Drain current limited by maximum junction temperature
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
„ ELECTRICAL CHARACTERISTICS
SYMBOL
θ_JA
θ_JC
RATINGS
110
4.53
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V, T_J=150°C 80
V_DS=80V, V_GS=0V,
V_GS=+20V, V_DS=0V
V_GS=-20V , V_DS=0V
V
1 µA
+100 nA
-100 nA
V_GS(TH)
R_DS(ON)
V_GS=V_DS, I_D=250µA
V_GS=10V, I_D=30A
2.0
4.0 V
32 40 mΩ
C_ISS
C_OSS
C_RSS
V_DS=25, V_GS=0V, f=1.0MHz
2400
pF
390
pF
30
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-732.a