UTT150N03 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

UTT150N03
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed
IDM
150
A
266
A
Single Pulsed Avalanche Energy (Note 2)
EAS
300
mJ
Power Dissipation
Power Dissipation
Derate above 25°C
PD
160
W
1.07
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
註解 [U1]: 设计人员根据曲
线图得到的（pulse
width=300us）
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.94
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VER.a
2 of 6
QW-R502-516.a