UTM3023_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UTM3023
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
30
±20
V
Maximum Continuous Drain Current
I_D
Maximum Pulsed Drain Current
I_DM
30
70
A
Maximum Power Dissipation
P_D
62.5
W
Maximum Junction Temperature
Storage Temperature Range
T_J
T_STG
150
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BV_DSS V_GS =0 V, I_DS =250µA
30
I_DSS V_DS =24 V, V_GS =0 V
I_GSS V_DS =0 V, V_GS = ±20V
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS =V_GS, I_DS =250 µA
1
Drain-Source On-State Resistance(Note 2)
R_DS(ON)
V_GS =10 V, I_DS =20 A
V_GS =5 V, I_DS =10 A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_DS =15 V, V_GS =0V, f=1.0MHz
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain Charge
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G
Q_GS
Q_GD
I_DS=2 A,V_DD=15 V,R_G=6 Ω,
V_GEN =10V
V_DS =15V, V_GS =5V, I_DS =10A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2) V_SD I_SD=15A,V_GS=0V
Note: 1. Pulse width limited by T_J(MAX)
2. Pulse width ≤300us, duty cycle ≤2%
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
TYP
1.5
15
22
1200
220
100
11
17
37
20
15
5.8
3.8
0.7
MAX UNIT
V
1 µA
±100 nA
2V
20
28
mΩ
pF
18
26
54
ns
30
20
nC
1.3 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-178.B