UT60T03 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE

UT60T03
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS(T_J =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
V_GSS
±20
V
I_D
45
A
I_DM
120
A
Power Dissipation (T_C=25°C)
TO-220F
TO-252
P_D
56
W
44
Junction Temperature
T_J
+150
℃
Strong Temperature
T_STG
-55 ~ +175
℃
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2 .Pulse width limited by safe operating area.
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
110
2.66
3.4
„ ELECTRICAL CHARACTERISTICS (T_J =25°C, unless otherwise noted)
UNIT
℃/W
℃/W
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS =0 V, I_D =250µA
30
V
Drain-Source Leakage Current
I_DSS
V_DS =30V, V_GS =0V
1 µA
Gate-Body Leakage Current
I_GSS
V_GS = ±20 V
Breakdown Voltage Temperature Coefficient ΔBV_DSS/ΔT_J Reference to 25℃, ID=1mA
ON CHARACTERISTICS
±100 nA
0.026
V/℃
Gate Threshold Voltage
V_GS(TH) V_DS =V_GS, I_D =250 µA
1
3
V
Static Drain-Source On-Resistance(Note 1)
DYNAMIC PARAMETERS
R_DS(ON)
V_GS =10 V, I_D =20 A
V_GS =4.5 V, I_D =15 A
12 _mΩ
25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C_ISS
C_OSS
C_RSS
V_DS = 25V, V_GS = 0V,
f = 1.0MHz
1135
200
pF
135
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Q_G
Q_GS
Q_GD
V_DS = 20V, V_GS = 4.5V,
I_D =20 A (Note 1)
11.6
3.9
nC
7
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
t_D(ON)
t_R
t_D(OFF)
t_F
V_GS=10V, V_DS=15V,
R_D=0.75Ω, I_D =20 A,
R_G =3.3 Ω (Note 1)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
8.8
57.5
ns
18.5
6.4
Forward On Voltage (Note 1)
V_SD
I_S=45 A,V_GS=0V
1.3 V
Reverse Recovery Time
t_RR
I_S=20 A, V_GS=0 V,dI/dt=100
23.3
ns
Reverse Recovery Charge
Q_RR
A/μs
16
nC
Note: 1.Pulse width ≤ 300us , duty cycle ≤ 2%.
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-183.B