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| UT2P06 Datasheet, PDF (2/3 Pages) Unisonic Technologies – P-CHANNEL POWER MOSFET | |||
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UT2P06
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
-60
V
±20
V
Drain Current
Continuous
ID
Pulsed
IDM
-2
A
-6.03
A
Avalanche Current (L=0.1mH)
Power Dissipation (Note 1, 2)
IAR
-7
A
PD
0.3
W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
°C
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on FR4 Board.
3. t ⤠5 sec
ï® THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
320
°C/W
Notes: Pulse width ⤠300μs; duty cycle ⤠2%. The pulse current is limited by the maximum junction temperature.
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=-250µA, VDS=0V
VDS=-60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 1)
VGS(TH)
RDS(ON)
VDS=VGS, ID=-250µA
VGS= -10V, ID= -0.9A
VGS= -4.5V, ID= -0.8A
DYNAMIC PARAMETERS
Input Capacitance (Note 3)
CISS
Output Capacitance (Note 3)
COSS VGS=0V, VDS=-25V, f=1.0MHz
Reverse Transfer Capacitance (Note 3)
CRSS
SWITCHING PARAMETERS (Note 2)
Total Gate Charge (Note 3)
QG
Gate to Source Charge (Note 3)
QGS VGS=-10V, VDS=-30V, ID=-0.9A
Gate to Drain Charge (Note 3)
QGD
Turn-ON Delay Time (Note 2, 3)
tD(ON)
Rise Time (Note 2, 3)
Turn-OFF Delay Time (Note 2, 3)
tR
tD(OFF)
VDD=-30V, ID=-1A, RGâ6â¦,
VGS=-10V
Fall-Time (Note 2, 3)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2)
Maximum Body-Diode Continuous Current
IS
TA=25°C (Note 2)
Maximum Body-Diode Pulsed Current
ISM TA=25°C (Note 3)
Drain-Source Diode Forward Voltage (Note 1) VSD IS=-0.8A, VGS=0V
Notes: 1. Measured under pulsed conditions. Pulse width ⤠300μs; duty cycle ⤠2%.
2. Switching characteristics are independent of operating junction temperature.
3. For design aid only, not subject to production testing.
MIN TYP MAX UNIT
-60
V
-0.5 µA
+100 nA
-100 nA
-1
-3 V
0.4
0.6
â¦
141
pF
13.1
pF
10.8
pF
5.1
nC
0.7
nC
0.7
nC
1.6
ns
2.3
ns
13
ns
5.8
ns
-1.42 A
-6.03 A
-0.85 -0.95 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-B01.B
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