UT12N10_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

UT12N10
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
V_DSS
V_GSS
100
V
±20
V
Drain Current
Continuous
I_D
Pulsed (Note 2)
I_DM
12
A
44
A
Power Dissipation
SOT-223
TO-251/TO-252
P_D
9
36
W/°C
Junction Temperature
Storage Temperature
T_J
T_STG
+150
°C
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
 THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
SOT-223
TO-251/TO-252
θ_JA
150
50
°C/W
Junction to Case
SOT-223
TO-251/TO-252
θ_JC
14
3.5
°C/W
Note: 1. θ_JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θ_JC is guaranteed by design while θ_JA is determined by the user’s board design.
2. When mounted on a 1 in² pad of 2 oz copper.
 ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V
V_DS=100V, V_GS=0V
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
V_GS(TH)
R_DS(ON)
g_FS
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=6A
V_DS=10V, I_D=6A
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1.0MHz
Q_G
Q_GS
Q_GD
t_D(ON)
t_R
t_D(OFF)
t_F
V_GS=10V, V_DS=50V, I_D=1.3A
V_DD=30V, I_D=0.5A, V_GS=10V,
R_G=25Ω
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
Drain-Source Diode Forward Voltage (Note 1)
V_SD I_S=12A, V_GS=0V
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Guaranteed by design, not subject to production testing.
MIN TYP MAX UNIT
100
V
1 µA
+100 nA
-100 nA
1
3V
150 180 mΩ
5
S
430 500 pF
90
pF
20
pF
8 16 nC
1.5
nC
2
nC
12 24 ns
174 185 ns
132 145 ns
188 210 ns
12 A
1.2 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-508.f