UP1851 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

UP1851
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-100
V
Collector-Emitter Voltage
V_CEO
-60
V
Emitter-Base Voltage
V_EBO
-6
V
Peak Pulse Current
I_CM
-15
A
Continuous Collector Current
I_C
-5
A
Power Dissipation (T_A=25°C)
Junction Temperature
Storage Temperature
P_D
T_J
T_STG
3
W
+150
℃
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
I_EBO
Collector-Emitter Saturation Voltage
(Note)
V_CE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V_BE(SAT)
V_BE(ON)
DC Current Gain (Note)
h_FE
Transition Frequency
f_T
Output Capacitance
C_OBO
Switching Times
t_ON
t_OFF
Note: Pulse width=300μs. Duty cycle≤2%
TEST CONDITIONS
I_C=-100μ A
I_C=-1μA, R_B≦1KΩ
I_C=-10mA (Note)
I_E=-100μA
V_CB=-80V
V_CB=-80V, R≤1kΩ
V_EB=-6V
I_C=-100mA, I_B=-10mA
I_C=-1A, I_B=-100mA
I_C=-2A, I_B=-200mA
I_C=-5A, I_B=-500mA
I_C=-5A, I_B=-500mA (Note)
I_C=-5A, V_CE=-1V (Note)
I_C=-10mA, V_CE=-1V
I_C=-2A, V_CE=-1V
I_C=-5A, V_CE=-1V
I_C=-10A, V_CE=-1V
I_C=-100mA, V_CE=-10V, f=50MHz
V_CB=-10V, f=1MHz
I_C=-2A, I_B1=-200mA
I_B2=200mA, V_CC=-10V
MIN
-100
-100
-60
-6
100
100
75
10
TYP MAX
-140
-140
-90
-8
-150
-150
-50
-20 -50
-85 -140
-155 -210
-370 -460
-1080 -1240
-935 -1070
200
200 300
90
25
120
74
82
350
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
MHz
pF
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-018.B