UMZ1N_15 Datasheet, PDF (2/3 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar Power Management

UMZ1N
Preliminary
DUAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C)
PARAMETER
SYMBOL
LIMITS
TR1
TR2
UNIT
Collector-Base Voltage
V_CBO
60
-60
V
Collector-Emitter Voltage
V_CEO
50
-50
V
Emitter-Base Voltage
V_EBO
7
-6
V
Collector Current
I_C
0.15
-0.15
A
Collector Power Dissipation
Pc
0.15
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C)
PARAMETER
TR1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
TR2
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
TEST CONDITIONS
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
Cob
I_C=50µA
I_C=1mA
I_E=50µA
V_CB=60V
V_EB=7V
I_C/I_B=50mA/5mA
V_CE=6V, I_C=1mA
V_CE=12V, I_E=-2mA, f=100MHz
V_CB=12V, I_E=0A, f=1MHz
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(SAT)
h_FE
f_T
Cob
I_C=-50µA
I_C=-1mA
I_E=-50µA
V_CB=-60V
V_EB=-6V
I_C/I_B=-50mA/-5mA
V_CE=-6V, I_C=-1mA
V_CE=-12V, I_E=2mA, f=100MHz
V_CB=-12V,I_E=0A, f=1MHz
MIN TYP MAX UNIT
60
V
50
V
7
V
0.1 µA
0.1 µA
0.4 V
120
560
180
MHz
2 3.5 pF
-60
V
-50
V
-6
V
-0.1 µA
-0.1 µA
-0.5 V
120
560
140
MHz
4.0 5.0 pF
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