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| UM6K31N Datasheet, PDF (2/3 Pages) Texas Instruments – 2.5V Drive Nch + Nch MOSFET | |||
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UM6K31N
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, it is the same rating for the Tr1 AND Tr2)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
±20
Drain Current Continuous
Continuous
ID
Pulsed (Note1)
IDP
±250
±1
Source Current Continuous (Body Diode) Continuous
IS
125
Pulsed (Note1)
ISP
1
Power Dissipation
PD
150
Channel Temperature
TCH
150
Strage Temperature
TSTG
-55~150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL RESISTANCE
UNIT
V
V
mA
A
mA
A
mW
°C
°C
Channel to Ambient
PARAMETER
SYMBOL
θJA
RATINGS
833
UNIT
°C/W
 ELECTRICAL CHARACTERISTICS (Ta =25°C, it is the same rating for the Tr1 And Tr2)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=1mA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Gate- Source Leakage Current
IGSS
VGS = ±20 V, VDS=0 V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=10V, ID=1mA
VGS=10V, ID=250mA
Static Drain-Source On-State
Resistance
RDS(ON)
(Note1)
VGS=4.5V, ID=250mA
VGS=4.0V, ID=250mA
VGS=2.5V, ID=10mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
(Note1)
Rise Time
Turn-OFF Delay Time
tR
(Note1)
tD(OFF)
(Note1)
ID=100mA, VDD 30V, VGS=10V,
RL 300â¦, RG=10â¦
See Fig 1-1.1-2
Fall-Time
tF
(Note1)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
(Note1)
IS=250mA, VGS=0V
Forward Transfer Admittance
|Yfs|
(Note1)
VDS=10V, ID=250mA
Note1: PWâ¤10μs DUTY CYCLEâ¤1%
MIN TYP MAX UNIT
60
V
1 µA
±10 µA
1.0
2.5 V
1.7 2.4
2.1 3.0 â¦
2.3 3.2
3.0 12.0
15
pF
4.5
pF
2.0
pF
3.5
ns
5
ns
18
ns
28
ns
1.2 V
0.25
S
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-503.a
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