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| UK3568_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – SILICON N-CHANNEL MOS TYPE | |||
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UK3568
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Drain-Gate Voltage (RG=20kâ¦)
VDSS
500
V
VDGR
500
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
(Note 2)
DC
Pulse(t=1ms)
ID
12
48
A
Avalanche Current
IAR
12
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 4)
EAR
364
4
mJ
Power Dissipation (TC=25°C)
TO-220F/TO-220F1
TO-220F2
PD
40
42
W
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Ensure that the temperature will not exceed 150°C.
3. VDD=90V, TCH= 25°C(initial), L=4.3mH, IAR=12A, RG=25â¦
4. Repetitive rating: pulse width limited by maximum channel temperature
ï® THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
3.125
2.98
UNIT
°C /W
°C /W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-263.F
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