UH4KG-AL6-R Datasheet, PDF (2/3 Pages) Unisonic Technologies – DUAL TRANSISTOR

UH4K
DUAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
50
V
Collector-Emitter Voltage
Emitter-Base Voltage
V_CEO
50
V
V_EBO
5
V
Collector Current
Power Dissipation
I_C
100
mA
P_D
150
mW
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Input Resistance
Current Gain Bandwidth Product
SYMBOL
BV_CBO
BV_CEO
BV_EBO
V_CE(SAT)
I_CBO
I_EBO
h_FE
R1
f_T
TEST CONDITIONS
I_C=50μA
I_C=1mA
I_E=50μA
I_C=10mA, I_B=1mA
V_CB=50V
V_EB=4V
V_CE=5V, I_C=1mA
V_CE=10V, I_E=-5mA, f=100MHz
MIN
50
50
5
100
7
TYP
300
10
250
MAX
0.3
0.5
0.5
600
13
UNIT
V
V
V
V
μA
μA
kΩ
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R218-029.A