 English |
|
|
|
|
|
|
|
| UH11K_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – DUAL BIAS RESISTOR TRANSISTORS | |||
| |||
| ◁ |
UH11K
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
50
V
50
V
Collector Current
Power Dissipation
IC
100
mA
PD
150
mW
Junction Temperature
Storage Temperature
TJ
TSTG
-55~+150
°C
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=10µA, IE=0
50
Collector-Emitter Breakdown Voltage (Note 1) BVCEO IC=2.0mA, IB=0
50
Collector-Base Cutoff Current
ICBO VCB=50V, IE=0
Collector-Emitter Cutoff Current
ICEO VCE=50V, IB=0
Emitter-Base Cutoff Current
IEBO VEB=6.0V, IC=0
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE VCE=10V, IC=5.0mA
35
Output Voltage (on)
VOL VCC=5.0V, VB=2.5V, RL=1.0 kâ¦
ON CHARACTERISTICS (Note 2)
Input Resistor
R1
7.0
Resistor Ratio
R1/R2
0.8
Notes: 1. Pulse Test: Pulse Width<300µs, Duty Cycle<2.0%
2. Pulse Test: Pulse Width<300ms, Duty Cycle<2.0%
V
V
100 nA
500 nA
0.5 mA
60
0.2 V
10 13 kâ¦
1.0 1.2 kâ¦
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-027.b
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese