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| UGP7N60_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – SMPS N-CHANNEL IGBT | |||
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UGP7N60
Preliminary
Insulated Gate Bipolar Transistor
ï® ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCES
600
V
Continuous Collector Current
TC=25°C
TC=110°C
IC
34
A
14
A
Collector Current Pulsed (Note 2)
ICM
56
A
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
VGES
±20
V
VGEM
±30
V
Switching Safe Operating Area at TJ=150°C
SSOA
35 (at 600V)
A
Single Pulse Avalanche Energy at TC=25°C
EAS
25 (at 7A)
mJ
Power Dissipation Total at TC=25°C
Power Dissipation Derating TC>25°C
PD
125
W
1.0
W/°C
Junction Temperature
Storage Temperature Range
TJ
TSTG
-55~+150
°C
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
ï® THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
1.0
ï® ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Note: Pulse Test: Pulse widthâ¦50μs.
SYMBOL
TEST CONDITIONS
BVCES IC=250µA, VGE=0V
BVECS IC=10mA, VGE=0V
ICES VCE=600V
TJ=25°C
TJ=125°C
VCE(SAT) IC=7A, VGE=15V
TJ=25°C
TJ=125°C
VGE(TH) IC=250µA
IGES VGE=±20V
SSOA
TJ=150°C, RG=25â¦, VGE=15V
L=100µH, VGE=600V
EAS ICE=7A, L=500µH
VGEP IC=7A, VCE=80V
Qg(ON)
IC=7A, VCE=300V
VGE=15V
VGE=20V
tdON)I
trI
tdOFF)I
tfI
IGBT and Diode at TJ=25°C,
ICE=7A, VGE=13.5V, RG=50â¦,
RL=1â¦, Test Circuit (Note)
MIN TYP MAX UNIT
600
V
20
V
250 µA
2 mA
1.3 2.7 V
1 2.2 V
4.5 5.9 7.2 V
±250 nA
35
A
25
mJ
10
V
37 45 nC
48 60 nC
400
ns
2.6
µs
300
ns
2
µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-048.b
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