UG9K_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – COMPOUND TRANSISTORS UG9K

UG9K
DUAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
50
V
V_CEO
50
V
Emitter-Base Voltage
Collector Current
V_EBO
I_C
10
V
100
mA
Collector Power Dissipation
Junction Temperature
P_C
150
mW
T_J
+150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Input Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Transfer Ratio
Transition Frequency
Input Resistance
Resistor Ratio
SYMBOL
BV_CBO
V_IN(ON)
V_IN(OFF)
V_CE(SAT)
I_CBO
h_FE
f_T
R₁
R₂/R₁
TEST CONDITIONS
I_C=100µA
V_CE=0.3V, I_C=10mA
V_CE=5V, I_C=100µA
I_C/I_B=10mA/0.5mA
V_CB=50V
V_CE=5V, I_C=5mA
V_CE=10V, I_E=-5mA
MIN TYP MAX UNIT
50
V
3
0.5 ^V
0.1 0.3 V
0.1 µA
30
250
MHz
7 10 13 kΩ
0.8 1 1.2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-008.E