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UG9K Datasheet, PDF (2/3 Pages) Unisonic Technologies – COMPOUND TRANSISTORS UG9K | |||
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UG9K
DUAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (TA=25°С)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Input Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
DC Current Transfer Ratio
Transition Frequency
Input Resistance
Resistor Ratio
SYMBOL
BVCBO
VIN(ON)
VIN(OFF)
VCE(SAT)
ICBO
hFE
fT
R1
R2/R1
TEST CONDITIONS
IC=100µA
VCE=0.2V, IC=5mA
VCE=5V, IC=100µA
IC/IB=10mA/0.5mA
VCB=50V
VCE=5V, IC=10mA
VCE=6, IE=-10mA,
MIN TYP MAX UNIT
50
V
1.5 3.0
V
0.8 1.1
0.1 0.3 V
0.1 µA
50
200
MHz
7 10 13 kâ¦
0.9 1 0.1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-008.B
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