UG9J Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EPITAXIAL TRANSISTOR

UG9J
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
50
V
V_CEO
50
V
Emitter-Base Voltage
Collector Current
V_EBO
I_C
10
V
100
mA
Collector Power Dissipation (Total rating)
P_C
Junction Temperature
T_J
200
mW
150
°C
Storage Temperature
T_STG
-55 ~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These characteristics apply to TR1 and TR2.
 ELECTRICAL CHARACTERISTICS (T_A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Input Voltage (ON)
Input Voltage (OFF)
Transition Frequency
Input Resistor
I_CBO
I_CEO
I_EBO
h_FE
V_CE(SAT)
V_IN(ON)
V_IN(OFF)
f_T
R1
Resistor Ratio
R1 / R2
Note: These characteristics apply to TR1 and TR2.
TEST CONDITIONS
V_CB=50V, I_E=0
V_CE=50V, I_B=0
V_EB=10V, I_C=0
V_CE=5V, I_C=10mA
I_C=5mA, I_B=0.25mA
V_CE=0.2V, I_C=5mA
V_CE=5V, I_C=0.1mA
V_CE=10V, I_E=5mA
MIN TYP MAX UNIT
100 nA
500 nA
0.38
0.71 mA
50
0.1 0.3
V
1.2
2.4
V
1.0
1.5
V
250
MHz
7
10
13
kΩ
0.9 1.0 1.1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R221-025.a