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| UG8J_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – EMITTER COMMON | |||
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UG8J
NPN SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
Supply Voltage
Input Voltage
Output Current
SYMBOL
VCC
VIN
IOUT
IC(MAX)
RATINGS
50
30
5
100
100
UNIT
V
V
mA
Total Power Dissipation
PD
150 (Note1)
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. 120mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Transition Frequency
Input Resistance
Resistance Ratio
Note: *Transition frequency of the device.
SYMBOL
TEST CONDITIONS
VI(OFF) VCC=5V, IOUT=100µA
VI(ON)
VO(ON)
VOUT=0.3V, IOUT=5mA
IOUT=5mA, IIN=0.25mA
IIN
IO(OFF)
VIN=5V
VCC=50V, VIN=0V
GI
VOUT=5V, IOUT=10mA
fT
VCE=10V, IE=-5mA, f=100MHz*
R1
R2/R1
MIN TYP MAX UNIT
1.3
0.5 V
0.1 0.3 V
1.8 mA
0.5 µA
80
250
MHz
3.29 4.7 6.11 Kâ¦
8 10 12
ï® EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)
(3) (2) (1)
R1
DTr2
R2
R2
R1
DTr1
(4)
(5)
R1=4.7kΩ
R2=47kΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R222-002. D
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