UG5N120 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES

UG5N120
Preliminary
Insulated Gate Bipolar Transistor
 ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Voltage
BV CES
1200
V
Gate-Emitter Voltage
V GES
±20
V
Gate to Emitter Voltage Pulsed
V GEM
±30
V
Collector Current Continuous
TC=25°C
TC=110°C
IC
21
A
10
A
Collector Current Pulsed (Note 1)
I CM
40
A
Power Dissipation Total at TC=25°C
Power Dissipation Derating TC>25°C
167
W
PD
1.33
W/°C
Short Circuit Withstand Time (Note 2) at VGE=15V
t SC
8
µs
Short Circuit Withstand Time (Note 2) at VGE=12V
t SC
15
µs
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
T STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=10A, L=400µH, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=25Ω.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θ JC
RATINGS
0.75
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
SYMBOL
TEST CONDITIONS
BVCES IC=250µA, VGE=0V
TC=25°C
ICES VCE=1200V
TC=125°C
TC=150°C
VCE(SAT) IC=5A, VGE=15V
TC=25°C
TC=150°C
VGE(TH) IC=45µA, VCE=VGE
IGES VGE=±20V
SSOA ^{TJ=150°C, RG=25Ω, VGE=15V,}
L=5mH, VCE(PK)=1200V
VGEP IC=5A, VCE=600V
Q G(ON)
IC=5A, VCE=600V
V GE =15V
V GE =20V
t d(ON)I
t rl
t d(OFF)I
t fl
IGBT and Diode at TJ=25°C
ICE=1.0A, VCE=30V, VGE=15V,
RG=25Ω
MIN
1200
6.0
30
TYP MAX UNIT
V
250 µA
100
µA
1.5 mA
2.45 2.7 V
3.7 4.2 V
6.8
V
±250 nA
A
10.5
V
53 65 nC
60 72 nC
220
ns
360
ns
320
ns
120
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-029.a