UG4J_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – EMITTER COMMON

UG4J
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
50
V
Collector-Emitter Voltage
V_CEO
50
V
Emitter-Base Voltage
Collector Current
V_EBO
5
V
I_C
100
mA
Total Power Dissipation
Junction Temperature
Storage Temperature
P_D
150(Note1)
mW
T_J
+150
°C
T_STG
-40 ~ +150
°C
Note1. *120mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Current Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Input Resistance
Note: * Transition frequency of the device.
SYMBOL
TEST CONDITIONS
BV_CBO I_C=50μA
BV_CEO I_C=1mA
BV_EBO I_E=1mA
I_CBO V_CB=50V
I_EBO
V_EB=4V
V_CE(SAT) IC/IB=10mA/1mA
h_FE V_CE=5V, I_C=1mA
f_T
V_CE=10V, I_E=-5mA, f=100MHz*
R₁
MIN TYP MAX UNIT
50
V
50
V
5
V
0.5 µA
0.5 µA
0.3 V
100 250 600
250
MHz
7 10 13 KΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R222-001.B