UG3K_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – GENERAL PURPOSE

UG3K
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise specified) (Note2)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
50
V
V_CEO
50
V
Emitter-Base Voltage
Collector Current
V_EBO
I_C
5
V
100
mA
Total Power Dissipation(120mW per element must
not be exceeded)
P_D
150
mW
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
v
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The Following Characteristics Apply to Both TR1 and TR2.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified) (Note2)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistance
SYMBOL
TEST CONDITIONS
BV_CBO I_C=50μA
BV_CEO
BV_EBO
I_C=1mA
I_E=50μA
I_CBO
I_EBO
V_CB=50V
V_EB=4V
V_CE(SAT) I_C/I_B=5mA/0.25mA
h_FE V_CE/I_C=5V/1mA
R₁
MIN TYP MAX UNIT
50
V
50
V
5
V
0.5 µA
0.5 µA
0.3 V
100 250 600
3.29 4.7 6.11 KΩ
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R218-003.B