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| UG25N45 Datasheet, PDF (2/3 Pages) Unisonic Technologies – N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |||
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UG25N45
Preliminary
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
450
V
Gate-Emitter Voltage
Pulsed Gate-Emitter Current
Pulsed Collector Current
VGEO
±6
V
IGEP
±8
A
ICP
150
A
Power Dissipation @ TC=25°C
Junction Temperature
Operating Temperature
PD
2.5
W
TJ
+150
°C
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
SYMBOL MIN TYP
Junction-to-Ambient
θJA
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
MAX
50
UNIT
â/W
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Saturation Voltage
Collector-Emitter Leakage Current
Gate-Emitter Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
SYMBOL
TEST CONDITIONS
VCE(SAT)
ICES
IGES
VGE=4.5V, ICP=150A (Pulsed)
VCE=450V, VGE=0 V
VGE=±6V, VCE=0V
VGE(TH) VCE=VGE, IC=250uA
CIES
COES
CRES
VGE=0V, VCE=25V, f=1.0MHz
tD(ON)
tR
tD(OFF)
tF
QG
QGE
QGC
VCC=225V, IC =50A, RG=25â¦,
VGE=10V
VCE=360V, VGE=4.5V, IC=50A
MIN TYP MAX UNIT
6 8V
10
uA
10
0.35
1.2 V
2227
pF
200
pF
79
pF
11.5
ns
24.5
ns
150
ns
3.3
ns
64.5
nC
7
nC
30
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-037.a
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