UG1N120 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 1200V NPT SERIES N-CHANNEL IGBT

UG1N120
Preliminary
Insulated Gate Bipolar Transistor
 ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Voltage
BV CES
1200
V
Gate to Emitter Voltage Continuous
V GES
±20
V
Gate to Emitter Voltage Pulsed
V GEM
±30
V
Collector Current Continuous
TC=25°C
TC=110°C
IC
5.3
A
2.7
A
Collector Current Pulsed (Note 1)
I CM
6
A
Power Dissipation Total at TC=25°C
Power Dissipation Derating TC>25°C
60
W
PD
0.476
W/°C
Forward Voltage Avalanche Energy (Note 2)
E AV
10
mJ
Short Circuit Withstand Time (Note 3) at VGE=15V
t SC
8
µs
Short Circuit Withstand Time (Note 3) at VGE=12V
t SC
13
µs
Operating Junction Temperature Range
TJ
-55~+150
°C
Storage Temperature Range
T STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. ICE=7A, L=400µH, VGE=15V, TJ=25°C.
4. VCE(PK)=840V, TJ=125°C, RG=82Ω.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Case
SYMBOL
θ JC
RATINGS
2.1
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
SYMBOL
TEST CONDITIONS
BVCES IC=250µA, VGE=0V
BV ECS
I CES
V CE(SAT)
V GE(TH)
I GES
SSOA
V GEP
Q G(ON)
t d(ON)I
t rl
t d(OFF)I
t fl
IC=10mA, VGE=0V
TC=25°C
V CE =1200V
TC=125°C
TC=150°C
IC=1.0A, VGE=15V
TC=25°C
TC=150°C
IC=50µA, VCE=VGE
V GE =±20V
TJ=150°C, RG=82Ω, VGE=15V,
L=2mH, VCE(PK)=1200V
IC=1.0A, VCE=600V
I C =1.0A,
V CE =600V
V GE =15V
V GE =20V
IGBT and Diode at TJ=25°C
ICE=1.0A, VCE=30V, VGE=15V,
RG=82Ω
MIN
1200
15
6.0
6
TYP MAX UNIT
V
V
250 µA
20
µA
1.0 mA
2.5 2.9 V
3.8 4.3 V
7.1
V
±250 nA
A
9.2
V
14 20 nC
15 21 nC
200
ns
470
ns
118
ns
200
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R207-028.a