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| UFP264 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 38A, 250V N-CHANNEL POWER MOSFET | |||
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UFP264
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)(Note 1)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed (Note 1)
IDM
38
A
152
A
Avalanche Energy
EAS
1000
mJ
EAR
28
mJ
Power Dissipation
Derate above 25°C
PD
280
W
2.2
mW/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
3. VDD=50V, L=1.1mH, RG=25â¦, IAS=38A
ï® THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
40
0.45
ï® ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=250V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=23A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Fall-Time
Off-Voltage Rise Time
QG
QGS
QGD
tD(ON)
tR
tF
tR(OFF)
VGS=10V, VDD=40V, ID=38A
VDD=30V, ID=1A, RG=4.7â¦,
VGS=10V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
(Note 1)
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=38A, VGS=0V (Note 2)
Notes: 1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration=300µs, Duty cycle â¤2%
MIN TYP MAX UNIT
250
V
25 µA
+100 nA
-100 nA
234 V
75 mâ¦
3900
pF
950
pF
250
pF
130 170 nC
26
nC
55
nC
30
ns
180
ns
35
ns
135
ns
38 A
152 A
1.8 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-813.B
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