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| UFP254 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 23A, 250V N-CHANNEL POWER MOSFET | |||
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UFP254
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
23
A
Pulsed
IDM
92
A
Avalanche Current
IAR
23
A
Avalanche Energy
Single Pulsed
EAS
Repetitive
EAR
410
mJ
19
mJ
Power Dissipation
PD
42
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=250V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=14A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
QG
QGS
VDD=50V, VGS=10V , ID=1.3A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=30V, ID=0.5A, RG=25â¦,
VGS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=23A, VGS=0V
MIN TYP MAX UNIT
250
V
25 μA
+100 nA
-100 nA
2
4V
140 mâ¦
2700
pF
620
pF
180
pF
140 nC
24 nC
71 nC
15
ns
63
ns
74
ns
50
ns
23 A
92 A
1.8 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
VER.a
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