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| UF9Z24 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 12A, 55V P-CHANNEL POWER MOSFET | |||
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UF9Z24
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-55
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous TC=25°C
ID
Pulsed
IDM
-12
A
-48
A
Single Pulsed Avalanche Current (L=0.1mH)
IAS
-7.2
A
Single Pulsed Avalanche Energy (L=0.1mH)(Note 1)
EAS
96
mJ
Power Dissipation
PD
38
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
Notes: 1. Duty cycleâ¤1 %.
SYMBOL
θJA
θJC
RATINGS
62
3.3
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=-250µA, VGS=0V
Drain-Source Leakage Current
IDSS VDS=-55V, VGS=0V
Forward
Gate-Source Leakage Current
Reverse
IGSS
VGS=+20V
VGS=-20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=-250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=-10V, ID=-12A (Note 1)
On State Drain Current (Note 1)
ID(ON) VGS=-10V, VDS=-5V
DYNAMIC PARAMETERS (Note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=-25V, f=1.0MHz
(Note 2)
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=-10V, VDS=-44V,
ID=-7.2A (Note 3)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
VDD=-28V, ID=-7.2A, RG=24â¦
tD(OFF) , RD=3.7⦠(Note 3)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (Note 2)
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IF=-12A, VGS=0V (Note 1)
Notes: 1. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2 %.
2. Guaranteed by design, not subject to production testing.
3. Independent of operating temperature.
MIN TYP MAX UNIT
-55
V
-25 µA
+100 nA
-100 nA
-2.0
-4.0 V
0.175 â¦
-12
A
350
pF
170
pF
92
pF
19 nC
5.1 nC
10 nC
13
ns
55
ns
23
ns
37
ns
-12 A
-48 A
-1.6 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-740.B
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