UF8010_11 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 80A, 100V N-CHANNEL POWER MOSFET

UF8010
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_J=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate to Source Voltage
Continuous Drain Current (V_GS=10V,T_C=25°C)
Pulsed Drain Current
Avalanche Energy
Single Pulse (Note 2)
Repetitive
Avalanche Current
Peak Diode Recovery dv/dt (Note 3)
TO-220 / TO-263
Power Dissipation(T_C=25°C) _TO-220F
Derating above 25°C
TO-220 / TO-263
TO-220F
V_GS
I_D
I_DM
E_AS
E_AR
I_AR
dv/dt
P_D
±20
80 (Note 2)
320
310
26
45
16
260
54
1.8
0.36
V
A
A
mJ
mJ
A
V/ns
W
W
W/°C
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ + 175
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting T_J = 25°C, L = 0.31mH, R_G =25Ω, I_AS = 45A.
3. I_SD≤45A, di/dt≤110A/μs, V_DD≤BV_DSS, T_J≤ 175°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220 / TO-263
TO-220F
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.57
2.3
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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