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| UF6N15Z Datasheet, PDF (2/3 Pages) Unisonic Technologies – 6A, 150V N-CHANNEL POWER MOSFET | |||
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UF6N15Z
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V DSS
150
V
Gate-Source Voltage
V GSS
±20
V
Continuous Drain Current
Continuous
ID
6
A
Pulsed
I DM
24
A
Avalanche Energy
E AS
52
mJ
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
T STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV DSS
I DSS
ID=250µA, VGS=0V
V DS =150V
Forward
Gate-Source Leakage Current
Reverse
I GSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) ID=250µA
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
RDS(ON) VGS=10V, ID=6A
Input Capacitance
Output Capacitance
C ISS
C OSS
VGS=0V, VDS=25V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C RSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
QG
Q GS
Q GD
t D(ON)
VDD=50V, ID=6A, IG=100µA,
V GS =10V
Rise Time
Turn-OFF Delay Time
tR
t D(OFF)
VDD=30V, ID=1A, RG=25â¦,
V GS =10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
Drain-Source Diode Forward Voltage
V SD
I S =6A
MIN TYP MAX UNIT
150
V
1 µA
10 µA
-10 µA
2
4V
1.95 â¦
190 300 pF
70 100 pF
20 50 pF
3.2
nC
0.64
nC
1.6
nC
6
ns
38
ns
11
ns
13
ns
6A
24 A
1.48 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-759.B
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