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| UF600 Datasheet, PDF (2/4 Pages) Pan Jit International Inc. – ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes) | |||
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UF600
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
600
V
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed
IDM
0.185
A
0.740
A
Power Dissipation
Junction Temperature
PD
0.50
W
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=-5V
VDS=480V
VDS=540V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=3V, ID=8μA
VGS=0V, ID=3mA
VGS=10V, ID=16mA
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=-5~5V, VDS=25V, f=1.0MHz
VDD=30V, ID=5mA, RG=25â¦,
VGS=-5~5V
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=3mA
ISD=16mA
MIN TYP MAX UNIT
600
V
90 nA
90 nA
+90 nA
-90 nA
-2.7
-1.5 V
0.05 0.9 1.2 Kâ¦
0.05 1.4 1.8 kâ¦
10
pF
30
pF
5
pF
1.29
nC
0.1
nC
0.47
nC
30
ns
55
ns
80
ns
265
ns
1.38 V
4.58 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-502-A20.B
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