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| UF5N15Z Datasheet, PDF (2/3 Pages) Unisonic Technologies – 5A, 150V N-CHANNEL POWER MOSFET | |||
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UF5N15Z
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V DSS
150
V
Gate-Source Voltage
V GSS
±20
V
Drain Current
Continuous
ID
Pulsed
I DM
5
A
20
A
Avalanche Current
I AR
5
A
Avalanche Energy
Single Pulsed
E AS
19
mJ
Power Dissipation
PD
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
T STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. L=1.5mH, IAS=5A, VDD=25V, RG=25â¦, Starting TJ=25°C.
ï® THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ JA
θ JC
ï® ELECTRICAL CHARACTERISTICS
RATINGS
110
2.13
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
I DSS
VDS=150V, VGS=0V
Forward
Gate-Source Leakage Current
Reverse
I GSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=5A
DYNAMIC PARAMETERS
Input Capacitance
C ISS
Output Capacitance
COSS VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
C RSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
Q GS
VGS=10V, VDS=75V, ID=4.5A
Gate to Drain Charge
Q GD
Turn-ON Delay Time
t D(ON)
Rise Time
Turn-OFF Delay Time
tR
t D(OFF)
VDD=30V, ID=1A, RG=25â¦,
V GS =10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
Drain-Source Diode Forward Voltage
V SD
IS=5A, VGS=0V
MIN TYP MAX UNIT
150
V
1 μA
10 μA
-10 μA
2
4V
0.1
1.9 â¦
718 955 pF
77 105 pF
3.3 5 pF
10.6 15 nC
3.5
nC
2.3
nC
9.2 19 ns
1.6 10 ns
14 24 ns
2.9 10 ns
5A
20 A
1.43 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-861. B
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