UF450 Datasheet, PDF (2/6 Pages) Unisonic Technologies – 12 Amps, 500 Volts N-CHANNEL POWER MOSFET

UF450
Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-to-Source Voltage
V_GSS
±20
V
Continuous Drain Current
I_D
12
A
Pulsed Drain Current
(Note 1)
I_DM
48
A
Avalanche Current
I_AR
12
A
Single Pulse Avalanche Energy (Note 2)
Power Dissipation T_C=25Â¥)
E_AS
8.0
mJ
P_D
190
W
Peak Diode Recovery dv/dt (Note 2)
dv/dt
3.5
V/ns
Junction Temperature
Strong Temperature
T_J
T_STG
+150
Â¥
-55 ~ +150
Â¥
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
Junction-to- Ambient
θ_JA
Junction-to-Case
θ_jC
„ ELECTRICAL CHARACTERISTICS (T_J =25¥, unless otherwise specified)
MAX
30
0.83
UNIT
Â¥/W
Â¥/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS =0 V, I_D =1.0 mA
500
Drain-Source Leakage Current
I_DSS V_DS=400V,V_GS =0 V
25
Gate-Source Leakage Current
I_GSS V_DS =0 V, V_GS = ±20V
±100
Breakdown Voltage Temperature Coefficient ∆BV_DSS/∆T_J Reference to 25Ċ, I_D=1.0mA
0.78
ON CHARACTERISTICS
V
µA
nA
V/Â¥
Gate Threshold Voltage
V_GS(TH) V_DS =V_GS, I_D =250 µA
2.0
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON)
V_GS =10V, I_D =7.75A
V_GS =10V, I_D =12A
400 _mΩ
500
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C_ISS
C_OSS
C_RSS
V_DS=
25V, V_GS =0V,
f=1.0MHz
2700
600
pF
240
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Q_G
Q_GS
Q_GD
V_DS =250V, V_GS =10V,
I_D =12A
55
5.0
27
Turn-ON Delay Time
t_D(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=250V, I_D =12A,
R_G =2.35Ω
Turn-OFF Fall-Time
t_F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V_SD IS=12A,VGS=0V, TJ =25Â¥
Maximum Continuous Drain-Source Diode
Forward Current
I_S
Maximum Pulsed Drain-Source Diode
Forward Current
I_SM
120
19 nC
70
35
190 _ns
170
130
1.7 V
12
A
48
Reverse Recovery Time
Reverse Recovery Charge
t_RR I_F=12 A, dI/dt≤100A/µs,
Q_RR ^TJ ^=25¥,VDD^{≤50V (Note3)}
Notes: 1. Repetitive Rating : Pulse width limited by T_J
2. V_DD = 50V, starting T_J = 25¥, Peak I_L = 12A, I_SD ≤ 12, di/dt ≤ 130A/µs,V_DD≤ 500V,
T_J≤150¥Suggested R_G =2.35Ω
3. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
1600 ns
14 µc
4. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-185.A