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TIP42C-Q Datasheet, PDF (2/3 Pages) Unisonic Technologies – PNP EPITAXIAL PLANAR TRANSISTOR
TIP42C-Q
PNP PLANAR TRANSISTOR
 ABSOLUTE MAXIMUM RATING (unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
Collector to Emitter Voltage
VCBO
VCEO
-100
V
-100
V
Emitter-Base Voltage
Collector Current (DC)
VEBO
IC
-5
V
-6
A
Collector Current (Pulse)
Base Current
IC
-10
A
IB
-2
A
Collector Dissipation (TC=25°C)
Junction Temperature
PC
65
W
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Emitter Breakdown Voltage (Note)
Collector Cutoff Current
BVCEO IC=-1mA, IB=0
ICEO VCE=-60V, IB=0
Collector Cutoff Current
Emitter Cutoff Current
ICES VCE=-100V, VEB=0
IEBO VBE=-5V, IC=0
Collector-Emitter Saturation Voltage (Note)
Base-Emitter on Voltage (Note)
VCE(SAT) IC=-6A, IB=-600mA
VBE(ON) VCE=-4V, IC=-6A,
DC Current Gain (Note)
hFE1 VCE=-4V, IC=-300mA
hFE2 VCE=-4V, IC=-3A
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW≤300μs, Duty Cycle≤2%
VCE=-10V, IC=-500mA, f=1MHz
 CLASSIFICATION OF hFE2
RANK
RANGE
A
15~30
B
28~48
MIN TYP MAX UNIT
-100
V
-0.7 mA
-400 μA
-1 mA
-2.2 V
-2.4 V
30
15
75
3
MHz
C
45~75
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-049.a