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| TIP41C_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EXPITAXIAL PLANAR TRANSISTOR | |||
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TIP41C
NPN PLANAR TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TC=25ï°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector Base Voltage
VCBO
100
V
Collector to Emitter Voltage
Emitter-Base Voltage
VCEO
100
V
VEBO
5
V
Collector Current
DC
Pulse
IC
6
A
10
A
Base Current
IB
TO-220
2
A
65
TC=25ï°C TO-220F
22
W
Collector Dissipation
TO-252
TO-220
PC
25
2
TA=25ï°C TO-220F
0.7
W
TO-252
0.75
Junction Temperature
TJ
150
ï°C
Storage Temperature
TSTG
-65 ~ +150
ï°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® ELECTRICAL CHARACTERISTICS (TC=25ï°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Emitter Base Breakdown Voltage
BVEBO IE=100μA, IC=0
Collector Base Breakdown Voltage
BVCBO IE=100μA, IC=0
Collector Emitter Sustaining Voltage (Note)
VCEO IC=30mA, IB=0
Collector Cutoff Current
ICEO VCE=60V, IB=0
Collector Cutoff Current
ICES VCE=100V, VEB=0
Emitter Cutoff Current
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=6A, IB=600mA
Base-Emitter On Voltage (Note)
VBE(ON) IC=6A, VCE=4V
DC Current Gain (Note)
hFE1
hFE2
IC=300mA, VCE=4V
IC=3A, VCE=4V
Current Gain Bandwidth Product
fT
Note: Pulse Test: PWâ¦300μs, Duty Cycleâ¦2%
VCE=10V, IC=500mA, f=1MHz
ï® CLASSIFICATION OF hFE2
RANK
RANGE
A
15~30
B
28~48
MIN TYP MAX UNIT
5
V
100
V
100
V
0.7 mA
400 μA
1 mA
1.5 V
2.0 V
30
15
75
3
MHz
C
45~75
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-008.I
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