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TIP41C_11 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EXPITAXIAL PLANAR TRANSISTOR
TIP41C
NPN PLANAR TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse
IC
6
A
10
A
Base Current
IB
2
A
TO-220
TC=25°C TO-220F
Collector Dissipation
TO-220
PC
TA=25°C TO-220F
65
W
22
2
W
0.7
Junction Temperature
Storage Temperature
TJ
TSTG
150
°C
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Emitter Sustaining Voltage (Note)
Collector Cutoff Current
VCEO
ICEO
IC=30mA, IB=0
VCE=60V, IB=0
Collector Cutoff Current
Emitter Cutoff Current
ICES VCE=100V, VEB=0
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage (Note)
Base-Emitter On Voltage (Note)
VCE(SAT) IC=6A, IB=600mA
VBE(ON) IC=6A, VCE=4V
DC Current Gain (Note)
hFE1
hFE2
IC=300mA, VCE=4V
IC=3A, VCE=4V
Current Gain Bandwidth Product
fT
Note: Pulse Test: PW≦300μs, Duty Cycle≦2%
VCE=10V, IC=500mA, f=1MHz
MIN TYP MAX UNIT
100
V
0.7 mA
400 μA
1 mA
1.5 V
2.0 V
30
15
75
3
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-008.D