TIP32C_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – PNP EXPITAXIAL PLANAR TRANSISTOR

TIP32C
PNP SILICON TRANSISTOR
„ ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-100
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
DC
I_C
PULSE
I_CM
-3
A
-5
A
Base Current
I_B
-1
A
TO-220
Power Dissipation
TO-252
P_D
2
W
1
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER
Collector Emitter Sustaining Voltage
(Note)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff current
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter On Voltage*
SYMBOL
BV_CEO
I_CES
I_CEO
I_EBO
V_CE(SAT)
V_BE(ON)
DC Current Gain (Note)
h_FE
Current Gain Bandwidth Product
f_T
Note: Pulse Test: PW≤300μs, Duty Cyle≤2%
TEST CONDITIONS
I_C=-30mA,I_B=0
V_CE=-100V, V_BE=0
V_CE=-60V, I_B=0
V_BE=-5V, I_C=0
I_C=-3A, I_B=-375mA
I_C=-3A, V_CE=-4A
I_C=-1A, V_CE=-4V
I_C=-3A, V_CE=-4V
I_C=-0.5A,V_CE=-10V, f=1MHz
MIN TYP MAX UNIT
-100
V
-200 μA
-0.3 mA
-1 mA
-1.2 V
-1.8 V
25
10
50
3
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R209-017,C