TIP32C_05 Datasheet, PDF (2/3 Pages) Unisonic Technologies – PNP EXPITAXIAL PLANAR TRANSISTOR

TIP32C
PNP EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Ta = 25Ċ)
PARAMETER
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
DC
PULSE
Base Current
Power Dissipation
Tc=25
Ta=25
Junction Temperature
Storage Temperature


SYMBOL
VCBO
VEBO
IC
ICM
IB
PD
TJ
TSTG
RATINGS
-100
-5
-3
-5
-1
40
2
+150

-40 ~ +150
ELECTRICAL CHARACTERISTICS (Ta= 25Ċ, unless otherwise specified.)
PARAMETER
Collector Emitter Sustaining Voltage*
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff current
Collector-Emitter Saturation Voltage*
Base-Emitter On Voltage*
SYMBOL
BVCEO
ICES
ICEO
IEBO
VCE(sat)
VBE(on)
DC Current Gain*
hFE
Current Gain Bandwidth Product
fT
*Pulse Test: PW<=300µs, Duty Cyle<=2%
TEST CONDITIONS
IC=-30mA,IB=0
VCE=-100V, VBE=0
VCE=-60V, IB=0
VBE=-5V, Ic=0
IC=-3A, IB=-375mA
IC=-3A, VCE=-4A
IC=-1A, VCE=-4V
IC=-3A, VCE=-4V
IC=-0.5A,VCE=-10V, f=1MHz
MIN
-100
25
10
3
TYP
UNIT
V
V
A
A
A
W
W
Ċ

Ċ

MAX
-200
-0.3
-1
-1.2
-1.8
UNIT
V
µA
mA
mA
V
V
50
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R209-017,B