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| TIP31C_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – NPN EXPITAXIAL PLANAR TRANSISTOR | |||
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TIP31C
NPN EXPITAXIAL TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
Pulse
IC
3
A
5
A
Base Current
IB
1
A
TO-126S
TO-126
Collector Dissipation (TC=25°C) TO-220
PC
10
W
40
W
TO-252
15
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
Collector Emitter Sustaining Voltage (Note) BVCEO IC=30mA, IB=0
100
V
Collector Cutoff Current
ICES VCB=100V, VEB=0
200 μA
Collector Cutoff Current
ICEO VCE=60V, IB=0
0.3 mA
Emitter Cutoff Current
IEBO VBE=5V, IC=0
1 mA
Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=3A, IB=375mA
1.2
V
Base-Emitter On Voltage (Note)
VBE(ON) IC=3A, VCE=4V
1.8
V
DC Current Gain (Note)
hFE1
hFE2
IC=1A, VCE=4V
IC=3A, VCE=4V
25
10
50
Current Gain Bandwidth Product
fT
IC=0.5A, VCE=10V f=1MHz
3
MHz
Note: Pulse Test: PWâ¤300μs, Duty Cycleâ¤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-010.E
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