TIP127_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – PNP EPITAXIAL TRANSISTOR

TIP127
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
V_CBO
-100
V
V_CEO
-100
V
Emitter to Base Voltage
V_EBO
-5
V
Collector Current
DC
Pulse
I_C
ICP
-5
A
-8
A
TO-220
65
W
Power Dissipation
TO-220F
P_D
TO-126/TO-126S
34
W
36
W
Junction Temperature
Storage Temperature
T_J
+150
°C
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Collector-Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
BV_CEO
I_CBO
I_CEO
I_EBO
V_CE(SAT)1
V_CE(SAT)2
V_BE(ON)
h_FE
TEST CONDITIONS
I_C=-10mA
V_CB=-100V
V_CE=-50V
V_EB=-5V
I_C=-3A, I_B=-12mA
I_C=-5A, I_B=-20mA
V_CE=-3V, I_C=-3A
V_CE=-3V , I_C=-500mA
V_CE=-3V , I_C=-3A
MIN TYP MAX UNIT
-100
V
-200 uA
-500 uA
-2 mA
-2 V
-4 V
-2.5 V
1000
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-005. I