TIP127_09 Datasheet, PDF (2/4 Pages) Unisonic Technologies – PNP EPITAXIAL TRANSISTOR

TIP127
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (T_a = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V_CBO
100
V
Collector to Emitter Voltage
V_CEO
100
V
Emitter to Base Voltage
V_EBO
5
V
Collector Current
I_C
5
A
Power Dissipation
TO-126
TO-220
P_D
40
W
65
W
Junction Temperature
T_J
150
°C
Operating Temperature
T_OPR
-20 ~ +85
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
„ ELECTRICAL CHARACTERISTICS (T_a =25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Collector-Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
BV_CEO
I_CBO
I_CEO
I_EBO
V_CE(SAT)1
V_CE(SAT)2
V_BE(ON)
h_FE
TEST CONDITIONS
I_C=100mA
V_CB=100V
V_CE=50V
V_EB=5V
I_C=3A, I_B=12mA
I_C=5A, I_B=20mA
V_CE=3V, I_C=3A
I_C=500mA, V_CE=3V
I_C=3A, V_CE=3V
MIN TYP MAX UNIT
100
V
200 uA
500 uA
2 mA
2V
4V
2.5 V
1
K
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-005,D