TIP122_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – NPN EPITAXIAL TRANSISTOR

TIP122
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (T_A=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
V_CBO
100
V
V_CEO
100
V
Emitter to Base Voltage
IC Collector Current
V_EBO
5
V
I_C
5
A
TO-126
36
W
Power Dissipation (T_C=25°C)
TO-220
TO-220F
P_D
65
W
34
W
TO-252
38
W
Junction Temperature
Storage Temperature
T_J
T_STG
+150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Collector-Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
SYMBOL
BV_CEO
V_CE(SAT)1
V_CE(SAT)2
V_BE(ON)
I_CBO
I_CEO
I_EBO
h_FE
TEST CONDITIONS
I_C=100mA
I_C=3A, I_B=12mA
I_C=5A, I_B=20mA
V_CE=3V, I_C=3A
V_CB=100V
V_CE=50V
V_EB=5V
I_C=500mA, V_CE=3V
I_C=3A, V_CE=3V
MIN TYP MAX UNIT
100
V
2V
4V
2.5 V
200 uA
500 uA
2 mA
1000
1000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-016.E