TIP110A_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR

TIP110A
Preliminary
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V_CBO
-45
V
Collector to Emitter Voltage
V_CEO
-35
V
Emitter to Base Voltage
V_EBO
-5
V
Collector Current
I_C
-10
A
Power Dissipation
P_D
65
W
Junction Temperature
T_J
150
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
Collector-Emitter Cut-Off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_CEO
I_EBO
V_CE(SAT)
V_BE(ON)
h_FE1
h_FE2
TEST CONDITIONS
I_C=-10mA, I_E=0A
I_C =-1mA, I_B =0A
I_E=-10mA, I_C=0A
V_CB =-45V, I_E =0A
V_CE =-35V, I_B=0A
V_BE =-5V, I_C=0A
I_C =-10A, I_B =-0.1A
V_CE =-2.0V ,I_C =-5mA
V_CE =-2.0V ,I_C =-0.5A
V_CE =-2.0V ,I_C =-10A
MIN
-45
-35
-5
2000
1000
TYP MAX UNIT
V
-4 μA
-10 μA
-2.0 mA
-2.0 V
-2.0 V
60000
60000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R203-004.C