|
TIP110A_09 Datasheet, PDF (2/3 Pages) Unisonic Technologies – LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR | |||
|
◁ |
TIP110A
Preliminary
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
-45
V
Collector to Emitter Voltage
VCEO
-35
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-10
A
Power Dissipation
PD
65
W
Junction Temperature
TJ
150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collect Cut-off Current
Collector-Emitter Cut-Off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
VCE(SAT)
VBE(ON)
hFE1
hFE2
TEST CONDITIONS
IC=-10mA, IE=0A
IC =-1mA, IB =0A
IE=-10mA, IC=0A
VCB =-45V, IE =0A
VCE =-35V, IB=0A
VBE =-5V, IC=0A
IC =-10A, IB =-0.1A
VCE =-2.0V ,IC =-5mA
VCE =-2.0V ,IC =-0.5A
VCE =-2.0V ,IC =-10A
MIN
-45
-35
-5
2000
1000
TYP MAX UNIT
V
-4 μA
-10 μA
-2.0 mA
-2.0 V
-2.0 V
60000
60000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-004.C
|
▷ |